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Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers
Publication:
Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers
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Date
2021
Proceedings Paper
https://doi.org/10.1149/10404.0167ecst
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rengo, Gianluca
;
Porret, Clément
;
Hikavyy, Andriy
;
Rosseel, Erik
;
Ayyad, Mustafa
;
Morris, Richard
;
Pourtois, Geoffrey
;
Loo, Roger
;
Vantomme, André
Journal
ECS Transactions
Abstract
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1780
since deposited on 2021-12-06
Acq. date: 2025-12-12
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Metrics
Downloads
803
since deposited on 2021-12-06
110
last month
23
last week
Acq. date: 2025-12-12
Views
1780
since deposited on 2021-12-06
Acq. date: 2025-12-12
Citations