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Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
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Authors
An, Junyang
;
Maurice, Jean-Luc
;
Roca i Cabarrocas, Pere
;
Chen, Wanghua
;
Depauw, Valerie
DOI
10.1016/j.apsusc.2021.149056
ISSN
0169-4332
Issue
na
Journal
APPLIED SURFACE SCIENCE
Volume
546
Title
Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 degrees C) and APCVD (1130 degrees C)
Publication type
Journal article
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