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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
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Date
2022
Journal article
https://doi.org/10.1109/TED.2022.3154341
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lee, Kookjin
;
Kaczer, Ben
;
Kruv, Anastasiia
;
Gonzalez, Mario
;
Eneman, Geert
;
Okudur, Oguzhan Orkut
;
Grill, Alexander
;
De Wolf, Ingrid
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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1542
since deposited on 2022-03-26
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Acq. date: 2026-01-11
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Downloads
1758
since deposited on 2022-03-26
224
last month
Acq. date: 2026-01-11
Views
1542
since deposited on 2022-03-26
5
last month
Acq. date: 2026-01-11
Citations