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Characterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity

dc.contributor.authorJansen, R. J. E.
dc.contributor.authorGlass, B.
dc.contributor.authorBoatella-Polo, C.
dc.contributor.authorThys, G.
dc.contributor.authorVerhaegen, S.
dc.contributor.authorFranciscatto, G.
dc.contributor.authorWouters, J.
dc.contributor.authorLambrichts, D.
dc.contributor.authorVargas-Sierra, S.
dc.contributor.authorGonzalez Lujan, J. J.
dc.date.accessioned2022-10-06T02:49:33Z
dc.date.available2022-10-06T02:49:33Z
dc.date.issued2022
dc.identifier.otherWOS:000848160100082
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40538
dc.sourceWOS
dc.titleCharacterisation of the DARE180U MOSFET Channel Geometry TID Radiation Sensitivity
dc.typeProceedings paper
dc.contributor.imecauthorThys, G.
dc.contributor.imecauthorVerhaegen, S.
dc.contributor.imecauthorFranciscatto, G.
dc.contributor.imecauthorWouters, J.
dc.contributor.imecauthorLambrichts, D.
dc.identifier.doi10.1109/RADECS47380.2019.9745671
dc.identifier.eisbn978-1-7281-5699-6
dc.source.numberofpages5
dc.source.peerreviewyes
dc.source.beginpage394
dc.source.endpage398
dc.source.conference19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
dc.source.conferencedateSEP 16-20, 2019
dc.source.conferencelocationMontpellier
imec.availabilityUnder review


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220.500.12860/40538.22023-01-05T13:51:53Zvalidation by library/open access desk
120.500.12860/40538*2022-10-06T02:49:33Z

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