Publication:
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
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Acq. date: 2026-01-11
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1426 since deposited on 2022-11-28
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337 since deposited on 2022-11-28
36last month
10last week
Acq. date: 2026-01-11
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1426 since deposited on 2022-11-28
Acq. date: 2026-01-11
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