Publication:

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Date

2022
Journal article
https://doi.org/10.1038/s41598-022-23951-x
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Author(s)

Kim, Donguk
;
Kim, Je-Hyuk
;
Choi, Woo Sik
;
Yang, Tae Jun
;
Jang, Jun Tae
;
Belmonte, Attilio  
;
Rassoul, Nouredine  
;
Subhechha, Subhali  
;
Delhougne, Romain  
;
Kar, Gouri Sankar  
;
Lee, Wonsok
;
Cho, Min Hee
;
Ha, Daewon
;
Kim, Dae Hwan

Journal

SCIENTIFIC REPORTS

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377 since deposited on 2022-11-28
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1426 since deposited on 2022-11-28
Acq. date: 2026-02-25

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