Publication:
Parasitic side channel formation due to ion implantation isolation of GaN HEMT
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Acq. date: 2026-01-10
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319 since deposited on 2023-01-14
43last month
6last week
Acq. date: 2026-01-10
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1232 since deposited on 2023-01-14
Acq. date: 2026-01-10
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