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Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

dc.contributor.authorBastos, Joao
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorFranco, Jacopo
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorTruijen, Brecht
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorCapogreco, Elena
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorSpessot, Alessio
dc.contributor.authorHigashi, Yusuke
dc.contributor.authorYoon, Younggwang
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorFazan, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2023-04-26T08:23:45Z
dc.date.available2023-02-27T03:27:53Z
dc.date.available2023-04-26T08:23:45Z
dc.date.issued2022
dc.identifier.issn1541-7026
dc.identifier.otherWOS:000922926400119
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41151.2
dc.sourceWOS
dc.titleBias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
dc.typeProceedings paper
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorTruijen, Brecht
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorHigashi, Yusuke
dc.contributor.imecauthorYoon, Younggwang
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecTruijen, Brecht::0000-0002-2288-1414
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDentoni Litta, Eugenio::0000-0003-0333-376X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.contributor.orcidimecDegraeve, Robin::0000-0002-4609-5573
dc.contributor.orcidimecCapogreco, Elena::0000-0003-3610-3629
dc.contributor.orcidimecSpessot, Alessio::0000-0003-2381-0121
dc.contributor.orcidimecHigashi, Yusuke::0000-0001-6121-0069
dc.date.embargo9999-12-31
dc.identifier.doi10.1109/IRPS48227.2022.9764547
dc.identifier.eisbn978-1-6654-7950-9
dc.source.numberofpages6
dc.source.peerreviewyes
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 27-31, 2022
dc.source.conferencelocationDallas
dc.source.journalna
imec.availabilityPublished - open access
dc.description.wosFundingTextThis work is supported by imec's industrial affiliation program on Logic and Memory devices. Special thanks to Teruyuki Mine and Yangyin Chen (Western Digital), for the fruitful discussions. The authors would also like to acknowledge the support of imec's fab, line and hardware teams.


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