Publication:

Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.

Date

2023-09

Proceedings Paper

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Author(s)

;

De Keersgieter, An

;

Matagne, Philippe

;

Chiarella, Thomas

;

Porret, Clément

;

Hikavyy, Andriy

;

Siew, Yong Kong

;

;

;

Horiguchi, Naoto

Journal

N/A

Statistics

221 since deposited on 2023-07-18

Acq. date: 2026-01-14