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Reduced resistivity of NiAl by backthinning for advanced interconnect metallization

dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorTokei, Zsolt
dc.contributor.authorHeylen, Nancy
dc.contributor.authorAdelmann, Christoph
dc.date.accessioned2023-08-11T12:53:01Z
dc.date.available2023-08-07T17:07:24Z
dc.date.available2023-08-11T12:53:01Z
dc.date.issued2023
dc.identifier.issn2380-632X
dc.identifier.otherWOS:001027381700053
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42288.2
dc.sourceWOS
dc.titleReduced resistivity of NiAl by backthinning for advanced interconnect metallization
dc.typeProceedings paper
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecTokei, Zsolt::0000-0003-3545-3424
dc.contributor.orcidimecHeylen, Nancy::0009-0008-0490-0993
dc.date.embargo9999-12-31
dc.identifier.doi10.1109/IITC/MAM57687.2023.10154878
dc.identifier.eisbn979-8-3503-1097-9
dc.source.numberofpages3
dc.source.peerreviewyes
dc.source.conferenceIEEE International Interconnect Technology Conference (IITC) / IEEE Materials for Advanced Metallization Conference (MAM)
dc.source.conferencedateMAY 22-25, 2023
dc.source.conferencelocationDresden
dc.source.journalIEEE International Interconnect Technology Conference (IITC) / IEEE Materials for Advanced Metallization Conference (MAM)
imec.availabilityPublished - open access
dc.description.wosFundingTextThe authors would like to thank M. Gade, O. Richard and L. Nelissen for the TEM/EDS analysis; I. Hoflijk and T. Conard for the XPS analysis. This work has been supported by imec's industrial affiliate program 011 nano-interconnects.


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220.500.12860/42288.2*2023-08-11T12:51:38Zvalidation by library/open access desk
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