Reduced resistivity of NiAl by backthinning for advanced interconnect metallization

Abstract

NiAl lias been investigated as a potential alternative for Cu iu future interconnect metallization schemes. Backthinning experiments of thick NiAl films (> 50 mn) by IBE or CMP leads to large grain sizes for small thicknesses. NiAl deposited at 420 degrees C by FVD shows a resistivity of 17 ( liicm for a 10 nm NiAl Sim. Combining deposition of epitaxial NiAl on Ge (100) with backthinning experiments using CMP led to a lower resistivity than FVD Ru: 11.5 pQcm at 7.7 urn aud 10.6 p icm pound at 17.2 mn.