Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Illarionov, Yu. Yu.; Karl, A.; Smets, Quentin; Kaczer, Ben; Knobloch, T.; Panarella, Luca; Schram, Tom; Brems, Steven; Cott, Daire; Asselberghs, Inge; Grasser, T.

doi:10.1038/s41699-024-00445-0

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

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2024-FEB 2

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https://doi.org/10.1038/s41699-024-00445-0

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NPJ 2D MATERIALS AND APPLICATIONS

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Acq. date: 2026-03-17

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

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