Publication:
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Loading...
Journal
Abstract
Description
Metrics
Views
142 since deposited on 2024-04-01
2last month
Acq. date: 2025-12-15
Citations
Metrics
Views
142 since deposited on 2024-04-01
2last month
Acq. date: 2025-12-15
Citations