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Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs
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Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs
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Date
2024
Journal article
https://doi.org/10.35848/1347-4065/ad2a9d
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eyben, Pierre
;
De Keersgieter, An
;
Matagne, Philippe
;
Chiarella, Thomas
;
Porret, Clément
;
Hikavyy, Andriy
;
Siew, Yong Kong
;
Goux, Ludovic
;
Mitard, Jerome
;
Horiguchi, Naoto
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
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111
since deposited on 2024-04-05
Acq. date: 2025-12-16
Citations
Metrics
Views
111
since deposited on 2024-04-05
Acq. date: 2025-12-16
Citations