Electronic stopping cross section for He in Ru, derived from RBS spectra

Abstract

We report electronic stopping cross section measurements for 4 He in Ru. For this, 120 nm Ru is deposited on a silicon substrate, and the stopping cross section is obtained from the analysis of Rutherford backscattering (RBS) spectra. The results are compared with SRIM-2010 predictions, and a new parametrization for the energy dependence of the stopping cross section is proposed.