Publication:
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
Loading...
Journal
Abstract
Description
Statistics
Downloads
290 since deposited on 2024-09-10
38last month
5last week
Acq. date: 2026-08-29
Views
451 since deposited on 2024-09-10
Acq. date: 2026-08-31
Citations
Statistics
Downloads
290 since deposited on 2024-09-10
38last month
5last week
Acq. date: 2026-08-29
Views
451 since deposited on 2024-09-10
Acq. date: 2026-08-31
Citations