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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
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Date
2024-DEC
Journal article
https://doi.org/10.1016/j.ultramic.2024.114034
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Guerguis, Bavley
;
Cuduvally, Ramya
;
Morris, Richard
;
Arcuri, Gabriel
;
Langelier, Brian
;
Bassim, Nabil
Journal
ULTRAMICROSCOPY
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9
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Acq. date: 2026-01-07
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398
since deposited on 2024-09-13
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last week
Acq. date: 2026-01-06
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Downloads
9
since deposited on 2024-09-13
8
last week
Acq. date: 2026-01-07
Views
398
since deposited on 2024-09-13
4
last month
1
last week
Acq. date: 2026-01-06
Citations