A DTCO Framework for 3D NAND Flash Readout

Abstract

To continue increasing the storage density of 3D NAND flash memories, new technology options need to be evaluated early on. This work presents a unique predictive parametric framework for Multi-Level Cell 3D NAND Flash read operation at the array level. This framework is used to explore the read sensitivity to multiple parameters and technology options. We identify the trade-offs between number of layers, read-current and read time to be the most determinant factors to ensure the array readability while enabling stacks of more than 300 layers and maximizing the memory density.