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Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K
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Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K
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Date
2025-APR
Journal article
https://doi.org/10.1016/j.sse.2025.109068
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tahiat, A.
;
Cretu, B.
;
Veloso, Anabela
;
Simoen, E.
Journal
SOLID-STATE ELECTRONICS
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191
since deposited on 2025-03-07
7
last month
4
last week
Acq. date: 2026-01-09
Citations
Metrics
Views
191
since deposited on 2025-03-07
7
last month
4
last week
Acq. date: 2026-01-09
Citations