Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method

Favia, Paola; Eneman, Geert; Nalin Mehta, Ankit; Martinez Alanis, Gerardo Tadeo; Richard, Olivier; Hikavyy, Andriy; Puttarame Gowda, Pallavi; Seidel, Felix; Pourtois, Geoffrey; De Keersgieter, An; Grieten, Eva

doi:https://doi.org/10.1016/j.mee.2025.112334

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Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method

Date

2025-03-17

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https://doi.org/10.1016/j.mee.2025.112334

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Favia, Paola

;

Eneman, Geert

;

Nalin Mehta, Ankit

;

Martinez Alanis, Gerardo Tadeo

;

Richard, Olivier

;

Hikavyy, Andriy

;

Puttarame Gowda, Pallavi

;

;

;

;

Journal

Microelectronic Engineering

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168 since deposited on 2025-03-18

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Acq. date: 2026-01-08

Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method

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