Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Bonito Oliva, Valeria; Robin, Eric; Hagedorn, Sylvia; Kirmse, Holm; Rouviere, Jean-Luc; Okuno, Hanako; Damilano, Benjamin; Michon, Adrien; Remmele, Thilo; Schulz, Tobias; Amari, Houari; Albrecht, Martin; Vennegues, Philippe

doi:10.1021/acs.cgd.4c01641

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Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

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2025-JUL 10

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https://doi.org/10.1021/acs.cgd.4c01641

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Bonito Oliva, Valeria

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CRYSTAL GROWTH & DESIGN

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45 since deposited on 2025-07-17

Acq. date: 2025-12-25

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

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