Browsing Articles by imec author "3193b486ff6d3430286eaadc93ff7205e2ec89d1"
Now showing items 1-20 of 20
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Alignment and averaging of scanning electron microscope image contours for optical proximity correction modeling purposes
De Bisschop, Peter; Van de Kerkhove, Jeroen (2010) -
Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography
Wei, Chih-, I; Latypov, Azat; De Bisschop, Peter; Khaira, Gurdaman; Fenger, Germain (2022) -
Calibration of physical resist models: methods, usability, and predictive power
Klostermann, U.; Mülders, T.; Ponomarenco, D.; Schmöller, T.; Van de Kerkhove, Jeroen; De Bisschop, Peter (2009) -
Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry
De Bisschop, Peter; Gomez, J.; Geenen, Luc; Vandervorst, Wilfried (1996) -
Empirical correlator for stochastic local CD uniformity in extreme ultraviolet lithography
De Bisschop, Peter; Hansen, Steven G. (2022) -
EUV vote-taking lithography for mitigation of printing mask defects, CDU improvement, and stochastic failure reduction
Bekaert, Joost; De Bisschop, Peter; Beral, Christophe; Hendrickx, Eric; van de Kerkhof, Mark A..; Bouten, Sander; Kupers, Michiel; Schiffelers, Guido; Verduijn, Erik; Brunner, Timothy (2018) -
Evaluation of stray light and quantitative analysis of its impact on lithography
Kim, Young-Chang; De Bisschop, Peter; Vandenberghe, Geert (2005) -
High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography
Hibino, Daisuke; Shindo, Hiroyuki; Abe, Yuichi; Hojyo, Yutaka; Fenger, Germain; Do, Thuy; Kusnadi, Ir; Sturtevant, John L.; Van de Kerkhove, Jeroen; De Bisschop, Peter (2011-02) -
How to make lithography patterns print: the role of OPC and pattern layout
De Bisschop, Peter (2015) -
Impact of finite laser bandwidth on the critical dimension of L/S structures
De Bisschop, Peter; Lalovic, Ivan; Trintchouk, Fedor (2008) -
Impact of mask three dimensional effects on resist-model calibration
De Bisschop, Peter; Muelders, Thomas; Klostermann, Ulrich; Schmoeller, Thomas; Biafore, John; Robertson, Stewart A.; Smith, Mark (2009) -
Initial assessment of the impact of a hard pellicle on imaging using a 193 nm step-and-scan system
De Bisschop, Peter; Kocsis, Michael; Bruls, R.; Van Peski, C.; Grenville, A. (2004) -
Introducing 157nm full field lithography
Goethals, Mieke; De Bisschop, Peter; Hermans, Jan (2003) -
Observation of negative mask error enhancement factor due to mask transmission resonance
Philipsen, Vicky; De Bisschop, Peter; Mesuda, Kei (2008) -
Optical proximity correction: a cross road of data flows
De Bisschop, Peter (2016) -
Status and critical challenges for 157nm lithography
Ronse, Kurt; De Bisschop, Peter; Goethals, Mieke; Hermans, Jan; Jonckheere, Rik; Light, Scott; Okoroanyanwu, Uzo; Watso, Robert; McAfferty, D.; Ivaldi, J.; Oneil, T.; Sewell, H. (2004) -
Stochastic effects in EUV lithography: random, local CD-variability and printing failures
De Bisschop, Peter (2017) -
Stochastic printing failures in EUVL
De Bisschop, Peter (2018) -
Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography
Belete, Zelalem; De Bisschop, Peter; Welling, Ulrich; Erdmann, Andreas (2021) -
The effect of backside particles on substrate topography
Bearda, Twan; Mertens, Paul; Holsteyns, Frank; De Bisschop, Peter; Compen, Rene; van Meer, Aschwin; Heyns, Marc (2005-10)