Browsing Articles by imec author "731f8ca1d8c3c503124ba1342980a69f8fa34e5d"
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A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node
Gupta, Mohit; Weckx, Pieter; Schuddinck, Pieter; Jang, Doyoung; Chehab, Bilal; Cosemans, Stefan; Ryckaert, Julien; Dehaene, Wim (2021) -
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaled technologies
Kosemura, Daisuke; Weckx, Pieter; Morrison, Sebastien; Franco, Jacopo; Toledano Luque, Maria; Cho, Moon Ju; Raghavan, Praveen; Kaczer, Ben; Jang, Doyoung; Miyaguchi, Kenichi; Garcia Bardon, Marie; Catthoor, Francky; Van der Perre, Liesbet; Lauwereins, Rudy; Groeseneken, Guido (2015) -
Comparison of temperature dependent carrier transport in FinFET and gate-all-Around nanowire FET
Kim, Soohyun; Kim, Jungchun; Jang, Doyoung; Ritzenthaler, Romain; Parvais, Bertrand; Mitard, Jerome; Mertens, Hans; Chiarella, Thomas; Horiguchi, Naoto; Lee, Jae Woo (2020) -
Device exploration of nanosheet transistors for sub-7nm technology node
Jang, Doyoung; Yakimets, Dmitry; Eneman, Geert; Schuddinck, Pieter; Garcia Bardon, Marie; Raghavan, Praveen; Spessot, Alessio; Verkest, Diederik; Mocuta, Anda (2017) -
Experimental Validation of Process-Induced Variability Aware SPICE Simulation Platform for Sub-20 nm FinFET Technologies
Rawat, Amita; Sharan, Neha; Jang, Doyoung; Chiarella, Thomas; Bufler, Fabian; Catthoor, Francky; Parvais, Bertrand; Ganguly, Udayan (2021) -
Ge Devices: a potential candidate for sub-5nm nodes?
Sharan, Neha; Shaik, Khaja Ahmad; Jang, Doyoung; Schuddinck, Pieter; Yakimets, Dmitry; Garcia Bardon, Marie; Mitard, Jerome; Arimura, Hiroaki; Bufler, Fabian; Eneman, Geert; Collaert, Nadine; Parvais, Bertrand; Spessot, Alessio; Mocuta, Anda (2019) -
Limitations on lateral nanowire scaling beyond 7nm node
Kumar Das, Uttam; Garcia Bardon, Marie; Jang, Doyoung; Eneman, Geert; Schuddinck, Pieter; Yakimets, Dmitry; Raghavan, Praveen; Groeseneken, Guido (2017) -
Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients
Huh, Junghwan; Kim, Dong-Chul; Munshi, A Mazid; Dheeraj, Dasa L; Jang, Doyoung; Kim, Gyu-Tae; Fimland, Bjĝrn-Ove; Weman, Helge (2016) -
Mobility analysis of surface roughness scattering in FinFET devices
Lee, Jae Woo; Jang, Doyoung; Mouis, Mireille; Kim, Gyu Tae; Chiarella, Thomas; Hoffmann, Thomas Y.; Ghibaudo, Gérard (2011) -
Monte Carlo comparison of n-type and p-type nanosheets with FinFETs: Effect of the number of sheets
Bufler, Fabian; Jang, Doyoung; Hellings, Geert; Eneman, Geert; Matagne, Philippe; Spessot, Alessio; Na, Myung Hee (2020) -
Nanowire & nanosheet FETs for ultra-scaled, hgh-density logic and memory applications
Veloso, Anabela; Huynh Bao, Trong; Matagne, Philippe; Jang, Doyoung; Eneman, Geert; Horiguchi, Naoto; Ryckaert, Julien (2020) -
The Complementary FET (CFET) 6T-SRAM
Gupta, Mohit; Weckx, Pieter; Schuddinck, Pieter; Jang, Doyoung; Chehab, Bilal; Cosemans, Stefan; Ryckaert, Julien; Dehaene, Wim (2021) -
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI
Hills, Gage; Garcia Bardon, Marie; Doornbos, Gerben; Yakimets, Dmitry; Schuddinck, Pieter; Baert, Rogier; Jang, Doyoung; Mattii, Luca; Sherazi, Yasser; Rodopoulos, Dimitrios; Ritzenthaler, Romain; Lee, Chi-Shuen; Thean, Aaron; Radu, Iuliana; Spessot, Alessio; Debacker, Peter; Catthoor, Francky; Raghavan, Praveen; Shulaker, Max M.; Wong, H.-S. Philip; Mitra, Subhasish (2018)