Browsing Articles by author "Zaima, Shigeaki"
Now showing items 1-10 of 10
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Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Gupta, Somya; Shimura, Yosuke; Richard, Olivier; Douhard, Bastien; Simoen, Eddy; Bender, Hugo; Nakatsuka, Osama; Zaima, Shigeaki; Loo, Roger; Heyns, Marc (2018-10) -
Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Shinoda, Tatsuya; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Zaima, Shigeaki (2012) -
Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008) -
Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Si passivation for Ge pMOSFETs: impact of Si cap growth conditions
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Delmotte, Joris; Douhard, Bastien; Valev, Ventislav; Vanbel, Maarten; Verbiest, Thierry; Rip, Jens; Brijs, Bert; Conard, Thierry; Claypool, Chris; Takeuchi, Shotaro; Zaima, Shigeaki; Mitard, Jerome; De Jaeger, Brice; Dekoster, Johan; Caymax, Matty (2011) -
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2008)