Browsing Articles by imec author "b6ac06cee0e8f5a61784b2657a265eea04e0d9d9"
Now showing items 21-34 of 34
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Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process
Yamashita, Yuki; Stoffels, Steve; Posthuma, Niels; Geens, Karen; Li, Xiangdong; Furuta, Jun; Decoutere, Stefaan; Kobayashi, Kazutoshi (2019) -
On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study
Bakeroot, Benoit; You, Shuzhen; Wu, Tian-Li; Hu, Jie; Van Hove, Marleen; De Jaeger, Brice; Geens, Karen; Stoffels, Steve; Decoutere, Stefaan (2014) -
Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Malinowski, Pawel; Marcon, Denis; Lenci, Silvia; Geens, Karen; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2011) -
Reliability of p-GaN Gate HEMTs in Reverse Conduction
Cingu, Deepthi; Li, Xiangdong; Bakeroot, Benoit; Amirifar, Nooshin; Geens, Karen; Jacobs, Kristof J.P.; Zhao, Ming; You, Shuzhen; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Route Toward Commercially Manufacturable Vertical GaN Devices
Geens, Karen; Borga, Matteo; Khan, Md Arif; Filho Goncalez, Walter; Vohra, Anurag; Banerjee, Sourish; Lee, Kwangjae; Chatterjee, Urmimala; Cingu, Deepthi; Bakeroot, Benoit; Decoutere, Stefaan (2024) -
Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Malinowski, Pawel; Marcon, Denis; Cheng, Kai; Geens, Karen; Leys, Maarten; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2011) -
Silicon substrate removal of GaN DHFETs for enhanced (>1100V) breakdown voltage
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Derluyn, Joff; Van Hove, Marleen; Malinowski, Pawel; Marcon, Denis; Geens, Karen; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2010) -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K.; De Santi, C.; You, Shuzhen; Geens, Karen; Borga, Matteo; Decoutere, Stefaan; Bakeroot, Benoit; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Guo, Weiming; You, Shuzhen; Stoffels, Steve; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2018) -
Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates
Magnani, Alessandro; Cosnier, Thibault; Amirifar, Nooshin; Chatterjee, Urmimala; Zhao, Ming; Li, Xiangdong; Geens, Karen; Decoutere, Stefaan (2021) -
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(-)n Diodes: The Road to Reliable Vertical MOSFETs
Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo; Borga, Matteo; You, Shuzhen; Geens, Karen; Meneghini, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Gerosa, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Use of bilayer gate insulator in GaN-on-Si vertical trench MOSFETs: Impact on performance and reliability
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; You, Shuzhen; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Vertical GaN devices: Process and reliability
You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Bjork, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan (2021)