Browsing Articles by imec author "a3e793245a8929ea03475a8a62c9583a2557cb56"
Now showing items 21-40 of 61
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Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Wu, Tian-Li; Marcon, Denis; You, Shuzhen; Posthuma, Niels; Bakeroot, Benoit; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno; Masin, Fabrizio; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Bakeroot, Benoit; Moens, Peter (2018) -
Gate reliability of p-GaN HEMT with gate metal retraction
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Sangiorgi, E; Fiegna, C (2019) -
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Tang, Shun-Wei; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; de Jaeger, Brice; Wellekens, Dirk; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Wu, Tian-Li (2022) -
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Millesimo, M.; Fiegna, C.; Tallarico, A. N.; Posthuma, Niels; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof (2021) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs
Millesimo, M.; Tallarico, A. N.; Posthuma, Niels; Bakeroot, Benoit; Borga, Matteo; Decoutere, Stefaan (2021) -
Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
Acurio Mendez, Eliana; Crupi, Felice; De Jaeger, Brice; Ronchi, Nicolo; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel (2019) -
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Heuken, Michael; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
Li, Xiangdong; Posthuma, Niels; Bakeroot, Benoit; Liang, Hu; You, Shuzhen; Wu, Zhicheng; Zhao, Ming; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Wu, Tian-Li; Ronchi, Nicolo; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Investigation on carrier transport through AlN nucleation layer from differently doped Si(111) substrates
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Bakeroot, Benoit; You, Shuzhen; Groeseneken, Guido; Decoutere, Stefaan (2018) -
Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
Hu, Jie; Stoffels, Steve; Lenci, Silvia; You, Shuzhen; Bakeroot, Benoit; Ronchi, Nicolo; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
Wach, Filip; Uren, Michael J.; Bakeroot, Benoit; Zhao, Ming; Decoutere, Stefaan; Kuball, Martin (2020) -
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
Borga, Matteo; De Santi, Carlo; Stoffels, Steve; Bakeroot, Benoit; Li, Xiangdong; Zhao, Ming; Decoutere, Stefaan; Meneghesso,, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico (2020) -
Observation of dynamic VTH of p-GaN gate HEMTs by fast sweeping characterization
Li, Xiangdong; Bakeroot, Benoit; Wu, Zhicheng; Amirifar, Nooshin; You, Shuzhen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2020) -
On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study
Bakeroot, Benoit; You, Shuzhen; Wu, Tian-Li; Hu, Jie; Van Hove, Marleen; De Jaeger, Brice; Geens, Karen; Stoffels, Steve; Decoutere, Stefaan (2014) -
Optimization of the source field-plate design for low dynamic Rds-on dispersion of AlGaN/GaN MIS-HEMTs
Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Hu, Jie; Stoffels, Steve; De Jaeger, Brice; Decoutere, Stefaan; Wu, Tian-Li (2017)