Browsing Articles by title

Growth of high Ge content SiGe on (110) oriented Si wafers

Hikavyy, Andriy; Vanherle, Wendy; Vincent, Benjamin; Dekoster, Johan; Bender, Hugo; Moussa, Alain; Witters, Liesbeth; Hoffmann, Thomas Y.; Loo, Roger (2012)

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Wang, Gang; Leys, Maarten; Nguyen, Duy; Loo, Roger; Brammertz, Guy; Richard, Olivier; Bender, Hugo; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011)

Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation

Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G. (1998)

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008)

Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer

Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Derluyn, Joff; Kuijk, Maarten; Borghs, Gustaaf (2008)

Growth of organic semiconductor thin films with multi-micron domain size and fabrication of organic transistors using a stencil nanosieve

Fesenko, Pavlo; Flauraud, Valentin; Xie, Shenqi; Kang, Enpu; Uemura, Takafumi; Brugger, Jürgen; Genoe, Jan; Heremans, Paul; Rolin, Cedric (2017)

Growth of pentacene thin films by in-line organic vapor phase deposition

Rolin, Cedric; Vasseur, Karolien; Genoe, Jan; Heremans, Paul (2010)

Growth of polycrystalline phosphorous-doped CVD diamond layers

Lazea, A.; Mortet, V.; D'Haen, Jan; Geithner, P.; Ristein, J.; D'Olieslaeger, Marc; Haenen, Ken (2008)

Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors

Shongolova, A.; Correia, M.R.; Teixeira, J.P.; Leitao, J.P.; Gonzalez, J.C.; Ranjbarrizi, Samaneh; Garud, Siddhartha; Vermang, Bart; Cunha, J.M.V.; Salome, P.M.P.; Fernandes, P.A. (2018)

Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

Boninelli, S.; Calabretta, C.; Mancarella, F.; Mauceri, M.; Crippa, D.; Albani, M.; Bergamaschini, R.; Miglio, L.; La Via, F.; Agati, Marta (2021)

Growth of vertically-aligned carbon nanotube forests on conductive cobalt disilicide support

Zhang, Can; Yan, F; Allen, C.S.; Bayer, B.C.; Hofmann, S.; Hickey, B.J.; Cott, Daire; Zhong, G.; Robertson, John (2010)

Growth per cycle in atomic layer deposition: a theoretical model

Puurunen, Riikka (2003-10)

Growth per cycle in atomic layer deposition: real application examples of a theoretical model

Puurunen, Riikka (2003)

Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014)