Browsing Articles by title

Growth and in situ monitoring of GaN using IR interference effects

Considine, L.; Thrush, E. J.; Crawley, J. A.; Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Park, G. H.; Hwang, S. J.; Song, J. J. (1998)

Growth and integration challenges for carbon nanotubes interconnects

Vanpaemel, Johannes; Masahito, Sugiura; Barbarin, Yohan; De Gendt, Stefan; Tokei, Zsolt; Vereecken, Philippe; van der Veen, Marleen (2014)

Growth and material characterization of hafnium titanates deposited by atomic layer deposition

Popovici, Mihaela Ioana; Delabie, Annelies; Van Elshocht, Sven; Clima, Sergiu; Pourtois, Geoffrey; Swerts, Johan; Nyns, Laura; Tomida, Kazuyuki; Menou, Nicolas; Wouters, Dirk; Opsomer, Karl; Detavernier, Christophe; Kittl, Jorge (2009)

Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures

Wu, Ming Fang; De Wachter, Jo; Van Bavel, Mieke; Pattyn, Hugo; Langouche, G.; Vanhellemont, Jan; Bender, Hugo; Temst, K.; Wuyts, Bart; Bruynseraede, Y. (1994)

Growth and properties of strained Si1-x-yGexCylayers

Jain, Suresh; Osten, H. J.; Dietrich, B.; Rücker, H. (1995)

Growth and tunneling spectroscopy study of Fe/(GaAs,AlAs)/Ga1-xMnxAs ferromagnet/semiconductor heterostructures

Liu, Zhiyu; Boeve, Hans; Van Roy, Wim; Nemeth, Stefan; Moshchalkov, V. V.; Borghs, Gustaaf; De Boeck, Jo (2001)

Growth evolution and characterization of ultrathin CoGe2 films synthesized via catalytic solid-vapor reaction technique

Peter, Antony; Opsomer, Karl; Adelmann, Christoph; Van Ammel, Annemie; Meersschaut, Johan; Moussa, Alain; Schaekers, Marc; Wen, Liang Gong; Tokei, Zsolt; Van Elshocht, Sven (2014)

Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Chauhan, Prerna; Hasenöhrl, Stanislav; Minj, Albert; Chauvat, Marie Pierre; Ruterana, Pierre; Kuzmík, Jan (2020)

Growth kinetics and electrical characteristics of ultra-thin pyrogenetic silicon oxide

Depas, Michel; Vermeire, Bert; Mertens, Paul; Heyns, Marc (1995)

Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H.; Besling, Wim (2002)

Growth mechanism of a hybrid structure consisting of a graphite layer on top of vertical carbon nanotubes

Chiodarelli, Nicolo; Cigang, Xu; Richard, Olivier; Bender, Hugo; Klekachev, Alexander; Cooke, Mike; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe (2012)

Growth mechanisms for Si epitaxy on O atomic layers: impact of O-content and surface structure

Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies (2016)

Growth mechanisms of interfacial carbon layers at the epitaxial Al2O3(0001)/Cu(111) interface as application for epitaxial film lift-off

Tsai, Hung-Chieh; Marien, Brecht; Chancerel, Francois; De Gendt, Stefan; Brems, Steven (2023)