Browsing Presentations by author "Takeuchi, Shotaro"
Now showing items 1-5 of 5
-
Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth
Loo, Roger; Wang, Gang; Souriau, Laurent; Hikavyy, Andriy; Takeuchi, Shotaro; Caymax, Matty (2009) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010) -
Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition
Takeuchi, Shotaro; Loo, Roger; Caymax, Matty (2008) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010)