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Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.
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Integration of a composite SiO2HfO2 interpoly dielectric layer for low voltage polypoly erase in a 0.18μm HIMOSTM memory cell.
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Blomme, Pieter
;
Haspeslagh, Luc
;
De Vos, Joeri
;
Lorenzini, Martino
;
Van Houdt, Jan
;
De Meyer, Kristin
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1952
since deposited on 2021-10-15
Acq. date: 2026-01-07
Citations
Metrics
Views
1952
since deposited on 2021-10-15
Acq. date: 2026-01-07
Citations