N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe:C

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Author(s)

Meunier-Beillard, Philippe

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Van Nieuwenhuysen, Kris

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Vandervorst, Wilfried

Journal

Applied Surface Science

Metrics

2073 since deposited on 2021-10-15

Acq. date: 2025-10-23