Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors
Statistics
Statistics by Category
Download view's map
PNG
JPEG/JPG
Reports
Most viewed
Most viewed per month
Top city views
File Visits
Export Excel
Export CSV
Item
Views
Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors
1341