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Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors
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1900 since deposited on 2021-10-22
Acq. date: 2025-12-10
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1900 since deposited on 2021-10-22
Acq. date: 2025-12-10
Citations