Publication:

Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors

Date

2015
Journal article
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dc.contributor.authorNag, Manoj
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorSteudel, Soeren
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMaas, Joris
dc.contributor.authorGenoe, Jan
dc.contributor.authorMurata, Mitsuhiro
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorMaas, Joris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-22T21:19:03Z
dc.date.available2021-10-22T21:19:03Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25681
dc.identifier.urlhttp://jss.ecsdl.org/content/4/5/Q38.abstract?etoc
dc.source.beginpageQ38
dc.source.endpageQ42
dc.source.issue5
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume4
dc.title

Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors

dc.typeJournal article
dspace.entity.typePublication
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