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High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
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High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
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