Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
Statistics
Statistics by Category
Download view's map
PNG
JPEG/JPG
Reports
Most viewed
Most viewed per month
Top city views
File Visits
Export Excel
Export CSV
Item
Views
Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
1360