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Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
Publication:
Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mendes Bordallo, Ciao Cesar
;
Sivieri, Victor B.
;
Martino, Joao Antonio
;
Agopian, Paula G. D.
;
Rooyackers, Rita
;
Vandooren, Anne
;
Simoen, Eddy
;
Thean, Aaron
;
Claeys, Cor
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1857
since deposited on 2021-10-23
Acq. date: 2025-10-29
Citations
Metrics
Views
1857
since deposited on 2021-10-23
Acq. date: 2025-10-29
Citations