Publication:
Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes
Date
Loading...
Journal
Abstract
Description
Statistics
Views
1863 since deposited on 2021-10-23
1last month
1last week
Acq. date: 2026-04-06
Citations
Statistics
Views
1863 since deposited on 2021-10-23
1last month
1last week
Acq. date: 2026-04-06
Citations