Publication:

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Date

2016
Proceedings Paper
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dc.contributor.authorMendes Bordallo, Ciao Cesar
dc.contributor.authorSivieri, Victor B.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorAgopian, Paula G. D.
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T12:45:31Z
dc.date.available2021-10-23T12:45:31Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26998
dc.source.beginpageP23
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon -ULIS
dc.source.conferencedate25/01/2016
dc.source.conferencelocationWien Austria
dc.title

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

dc.typeProceedings paper
dspace.entity.typePublication
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