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Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
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Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
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