Browsing by Author "Afanasiev, Valeri"

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements

A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

Advanced ultralow-k organosilicate glasses: NEXAFS study

Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology

An electric field tunable energy band gap at silicene/(0001) ZnS interfaces

Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films

Atomic and electrical characterisation of amorphous silicon passivation layers

Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics

Atomic layer deposition of GdAlOx and GdHfOx using Gd(iPr-Cp)3

Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications

Band alignment and electron traps in Y2O3 layers on (100) Si

Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers

Band alignment between (100)Si and complex rare earth/transition metal oxides

Band alignment between (100)Si and complex rare-earth/transition metal oxides

Band alignment between (100)Si and Hf-based complex metal oxides

Band offsets at interfaces of (100)InxGa1-xAs (0

Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

Bandgap narrowing in low-k dielectrics

Can silicon behave like graphene? A first-principles study