Browsing by Author "Agaiby, R."
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Publication Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating
Journal article2008, IEEE Transactions on Electron Devices, (55) 6, p.1568-1573Publication Quantifying self-heating effects with scaling in globally strained Si MOSFETS
Journal article2007, Solid-State Electronics, (51) 11_12, p.1473-1478Publication Reduced self-heating by strained silicon substrate engineering
;O'Neill, A. ;Olsen, S. ;Yang, Y. ;Agaiby, R. ;Hellstrom, P.E. ;Ostling, M. ;Lyutovich, K.Kasper, E.Meeting abstract2007, 5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V, 12/11/2007Publication Reduced self-heating by strained silicon substrate engineering
;O'Neill, A. ;Olsen, S. ;Yang, Y. ;Agaiby, R. ;Hellstrom, P.E ;Ostling, M. ;Lyutovich, K.Kasper, E.Meeting abstract2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007Publication Strain engineering for high mobility channels
;Olsen, S. ;Al Tarawneh, Z. ;Varzgar, J, ;Escobedo-Cousin, E. ;Agaiby, R. ;Dobrosz, P.O'Neill, A.Oral presentation2008, International Conference on Semiconductor TechnologyPublication Strained Si/SiGe MOS technology
;Olsen, S. ;Yan, L. ;Agaiby, R. ;Escobedo-Cousin, E. ;O'Neill, A.G. ;Hellstrom, P.-E.Ostling, M.Oral presentation2007, 4th International Symposium on Advanced Gate Stack technologyPublication Strained Si/SiGe MOS technology: improving gate dielectric integrity
;Olsen, S.H. ;Yan, L. ;Agaiby, R. ;Escobedo-Cousin, A.G. ;O'Neil, A.G. ;Hellstrom, P.E.Ostling, M.Journal article2009, Microelectronic Engineering, (86) 3, p.218-223