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Browsing by Author "Agaiby, R."

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    Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating

    Agaiby, R.
    ;
    O'Neill, A.G
    ;
    Olsen, S.H
    ;
    Eneman, Geert  
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    Verheyen, Peter  
    ;
    Loo, Roger  
    ;
    Claeys, Cor
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 6, p.1568-1573
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    Quantifying self-heating effects with scaling in globally strained Si MOSFETS

    Agaiby, R.
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    Yang, Y.
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    Olsen, S.H.
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    O'Neill, A.G.
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    Eneman, Geert  
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    Verheyen, Peter  
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    Loo, Roger  
    Journal article
    2007, Solid-State Electronics, (51) 11_12, p.1473-1478
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    Reduced self-heating by strained silicon substrate engineering

    O'Neill, A.
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    Olsen, S.
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    Yang, Y.
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    Agaiby, R.
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    Hellstrom, P.E.
    ;
    Ostling, M.
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    Lyutovich, K.
    ;
    Kasper, E.
    Meeting abstract
    2007, 5th International Symposium on Control of Semiconductor Interfaces - ISCSI-V, 12/11/2007
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    Reduced self-heating by strained silicon substrate engineering

    O'Neill, A.
    ;
    Olsen, S.
    ;
    Yang, Y.
    ;
    Agaiby, R.
    ;
    Hellstrom, P.E
    ;
    Ostling, M.
    ;
    Lyutovich, K.
    ;
    Kasper, E.
    Meeting abstract
    2007, 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, 8/11/2007
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    Strain engineering for high mobility channels

    Olsen, S.
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    Al Tarawneh, Z.
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    Varzgar, J,
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    Escobedo-Cousin, E.
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    Agaiby, R.
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    Dobrosz, P.
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    O'Neill, A.
    Oral presentation
    2008, International Conference on Semiconductor Technology
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    Strained Si/SiGe MOS technology

    Olsen, S.
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    Yan, L.
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    Agaiby, R.
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    Escobedo-Cousin, E.
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    O'Neill, A.G.
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    Hellstrom, P.-E.
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    Ostling, M.
    Oral presentation
    2007, 4th International Symposium on Advanced Gate Stack technology
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    Strained Si/SiGe MOS technology: improving gate dielectric integrity

    Olsen, S.H.
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    Yan, L.
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    Agaiby, R.
    ;
    Escobedo-Cousin, A.G.
    ;
    O'Neil, A.G.
    ;
    Hellstrom, P.E.
    ;
    Ostling, M.
    Journal article
    2009, Microelectronic Engineering, (86) 3, p.218-223

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