Browsing by Author "Agopian, P. G. D."
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Publication Analog behavior of V-FET operating in forward and reverse mode
; ; Agopian, P. G. D.Journal article2025-APR, SOLID-STATE ELECTRONICS, (225) April, p.109073Publication Dynamic threshold voltage influence on Ge pMOSFET hysteresis
Proceedings paper2015, 30th Symposium on Microelectronics Technology and Devices - SBMICRO, 31/08/2015, p.1-4Publication Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
Journal article2023, SOLID-STATE ELECTRONICS, (208) October, p.Art. 108729Publication Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C
Journal article2021, SOLID-STATE ELECTRONICS, 185, p.108091