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Browsing by Author "Agopian, Paula"

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    Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

    Bordallo, Caio
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    Martino, Joao A.
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    Agopian, Paula
    ;
    Rooyackers, Rita
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    Vandooren, Anne  
    ;
    Thean, Aaron  
    Proceedings paper
    2015, 30th Symposium on Microelectronics Technology and Devices - SBMicro, 31/08/2015, p.1-4
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    Comparative experimental study between tensile and compressive uniaxially stressed nMuGFETs under x-ray radiation focusing on analog behavior

    Peruzzi, V.
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    Gimenez, Salvador
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    Agopian, Paula
    ;
    Silveira, M.
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    Marino, Jaoa
    ;
    Simoen, Eddy  
    Proceedings paper
    2013, Advanced Semiconductor-on-Insulator Technology and Related Physics 16, 12/05/2013, p.177-185
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    Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient

    Martino, Joao
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    Sivieri, Victor
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    Agopian, Paula
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    Rooyackers, Rita
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    Vandooren, Anne  
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    Simoen, Eddy  
    Proceedings paper
    2016, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 25/01/2016, p.P11
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    Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

    Martino, Marcio
    ;
    Neves Souza, Felipe
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    Agopian, Paula
    ;
    Martino, Joao
    ;
    Vandooren, Anne  
    Proceedings paper
    2014, 9th International Caribbean Conference on Devices, Circuits and Systems - ICCDCS, 2/04/2014, p.78-81
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    Early voltage and transistor efficiency of pTFET compared to pFinFET devices

    Agopian, Paula
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    Martino, Joo
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    Rooyackers, Rita
    ;
    Vandooren, Anne  
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Meeting abstract
    2013, 7th International Workshop Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting, 8/04/2013
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    Experimental analysis of differential pairs designed with line tunnel FET devices

    Martino, Marcio
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    Martino, Joao
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    Agopian, Paula
    ;
    Rooyackers, Rita
    ;
    Simoen, Eddy  
    ;
    Collaert, Nadine  
    Proceedings paper
    2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.16.2
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    Field effect transistors: From MOSFET to tunnel-FET analog performance perspective

    Martino, Joao
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    Agopian, Paula
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2014, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 28/10/2014, p.674-677
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    Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs

    Buhler, Rudolf
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    Simoen, Eddy  
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    Agopian, Paula
    ;
    Claeys, Cor
    ;
    Martino, Joao
    Proceedings paper
    2013, Advanced Semiconductor-on-Insulator Technology and Related Physics, 12/05/2013, p.187-192
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    Generation-recombination noise in advanced CMOS devices

    Simoen, Eddy  
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    Oliveira, Alberto
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    Boudier, Dimitri
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    Mitard, Jerome  
    ;
    Witters, Liesbeth  
    Proceedings paper
    2016, 14th Symposium on High Purity and High Mobility Semiconductors, 2/10/2016, p.111-120
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    Ground plane impact on performance of relaxed Ge FinFETs

    Oliviera, Alberto
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    Goncalves, Guilherme  
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    Agopian, Paula
    ;
    Martino, Joao
    ;
    Witters, Liesbeth  
    Journal article
    2019, Journal of Integrated Circuits and Systems, (14) 1, p.1-6
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    Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K

    Bordallo, Caio
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    Martino, Joao
    ;
    Agopian, Paula
    ;
    Alian, AliReza  
    ;
    Mols, Yves  
    ;
    Rooyackers, Rita
    Proceedings paper
    2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.8.2
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    Influence of the source composition on the analog performance parameters of vertical nanowire-TFETs

    Agopian, Paula
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    Martino, Marcio
    ;
    dos Santos, Sara
    ;
    Neves, Felipe
    ;
    Martino, Joo
    ;
    Rooyackers, Rita
    Journal article
    2015, IEEE Transactions on Electron Devices, (62) 1, p.16-22
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    Intrinsic voltage gain of Line-TFETs and comparison with other TFET and MOSFET architectures

    Agopian, Paula
    ;
    Rooyackers, Rita
    ;
    Martino, Joao Antonio
    ;
    Vandooren, Anne  
    ;
    Simoen, Eddy  
    Proceedings paper
    2016, Joint International EUROSOI-Workshop and International Conference on Ultimate Integration on Silicon - ULIS, 25/01/2016
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    Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

    Oliveira, Alberto
    ;
    Agopian, Paula
    ;
    Martino, Joao
    ;
    Simoen, Eddy  
    ;
    Mitard, Jerome  
    Proceedings paper
    2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 16/10/2017, p.1-3
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    Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

    Claeys, Cor
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    Agopian, Paula
    ;
    Alian, AliReza  
    ;
    Arimura, Hiroaki  
    ;
    Fang, Wen
    ;
    Martino, Joao
    Proceedings paper
    2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.288-293
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    Opposite trends between digital and analog performance for different TFET technologies

    Agopian, Paula
    ;
    Bordallo, Caio
    ;
    Martino, Joao
    ;
    Rooyackers, Rita
    ;
    Simoen, Eddy  
    ;
    Collaert, Nadine  
    Proceedings paper
    2018, China Semiconductor Technology International Conference - CSTIC, 14/03/2018, p.1-4
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    Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs

    Teixeira, Fernando
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    Bordallo, Caio
    ;
    Silveira, Marcilei
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    Agopian, Paula
    ;
    Martino, Joao
    Journal article
    2014, Journal of Integrated Circuits and Systems, (9) 2, p.97-102
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    Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

    Martino, Marcio
    ;
    Martino, Joao Antopnio
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    Agopian, Paula
    ;
    Rooyackers, Rita
    ;
    Simoen, Eddy  
    Journal article
    2018, Semiconductor Science and Technology, (33) 7, p.075012-1-075012-6
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    Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

    Torres, H
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    Martino, Joao A.
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    Rooyackers, Rita
    ;
    Vandooren, Anne  
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2017, 32nd Symposium on Microelectronics Technology and Devices - SBMICRO, 28/08/2017, p.1-4
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    Radiation influence on biaxial+uinaxial strained silicon MuGFETs

    Bordallo, C.
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    Agopian, Paula
    ;
    Martino, Joao
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Meeting abstract
    2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2638
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