Browsing by Author "Agopian, Paula"
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Publication Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures
Proceedings paper2015, 30th Symposium on Microelectronics Technology and Devices - SBMicro, 31/08/2015, p.1-4Publication Comparative experimental study between tensile and compressive uniaxially stressed nMuGFETs under x-ray radiation focusing on analog behavior
Proceedings paper2013, Advanced Semiconductor-on-Insulator Technology and Related Physics 16, 12/05/2013, p.177-185Publication Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient
Proceedings paper2016, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 25/01/2016, p.P11Publication Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature
Proceedings paper2014, 9th International Caribbean Conference on Devices, Circuits and Systems - ICCDCS, 2/04/2014, p.78-81Publication Early voltage and transistor efficiency of pTFET compared to pFinFET devices
Meeting abstract2013, 7th International Workshop Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting, 8/04/2013Publication Experimental analysis of differential pairs designed with line tunnel FET devices
Proceedings paper2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.16.2Publication Field effect transistors: From MOSFET to tunnel-FET analog performance perspective
Proceedings paper2014, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 28/10/2014, p.674-677Publication Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs
Proceedings paper2013, Advanced Semiconductor-on-Insulator Technology and Related Physics, 12/05/2013, p.187-192Publication Generation-recombination noise in advanced CMOS devices
Proceedings paper2016, 14th Symposium on High Purity and High Mobility Semiconductors, 2/10/2016, p.111-120Publication Ground plane impact on performance of relaxed Ge FinFETs
Journal article2019, Journal of Integrated Circuits and Systems, (14) 1, p.1-6Publication Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K
Proceedings paper2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.8.2Publication Influence of the source composition on the analog performance parameters of vertical nanowire-TFETs
;Agopian, Paula ;Martino, Marcio ;dos Santos, Sara ;Neves, Felipe ;Martino, JooRooyackers, RitaJournal article2015, IEEE Transactions on Electron Devices, (62) 1, p.16-22Publication Intrinsic voltage gain of Line-TFETs and comparison with other TFET and MOSFET architectures
Proceedings paper2016, Joint International EUROSOI-Workshop and International Conference on Ultimate Integration on Silicon - ULIS, 25/01/2016Publication Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
Proceedings paper2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 16/10/2017, p.1-3Publication Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
Proceedings paper2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.288-293Publication Opposite trends between digital and analog performance for different TFET technologies
Proceedings paper2018, China Semiconductor Technology International Conference - CSTIC, 14/03/2018, p.1-4Publication Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
;Teixeira, Fernando ;Bordallo, Caio ;Silveira, Marcilei ;Agopian, PaulaMartino, JoaoJournal article2014, Journal of Integrated Circuits and Systems, (9) 2, p.97-102Publication Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Journal article2018, Semiconductor Science and Technology, (33) 7, p.075012-1-075012-6Publication Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic
Proceedings paper2017, 32nd Symposium on Microelectronics Technology and Devices - SBMICRO, 28/08/2017, p.1-4Publication Radiation influence on biaxial+uinaxial strained silicon MuGFETs
Meeting abstract2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2638