Browsing by Author "Baeyens, Yves"
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Publication A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier
Proceedings paper1996, GaAs '96 - European Gallium Arsenide and Related III-V Compounds Applications Symposium and Associated CAD Workshop; 5-7 June 19, p.1-4Publication Characterization and modelling of HEMTs as microwave switches and millimetre wave MMIC switches
Proceedings paper1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.707-710Publication Coplanar amplifiers up to W-band using InP dual-gate HEMTs
Proceedings paper1997, Proceedings of the Microwave and Optronics Conference - MIOP, 22/04/1997, p.61-64Publication DC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs
Journal article1996, Microelectronics and Reliability, 36, p.1911-1914Publication Delay Times in Lattice Matched InGaAs/InP HEMT's with Gatelengths between 80 and 250 nm
Oral presentation1995, 19th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '95); May 21-24, 1995; Stockholm, Sweden.Publication Dual-gate cascode HEMT model for non-linear MMICs
Proceedings paper1997, Proceedings of the Microwave and Optronics Conference - MIOP, 22/04/1997, p.388-392Publication GaAs and InP-based dual-gate HEMTs for high-gain amplifiers
Proceedings paper1995, IEEE 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO; 27 Nov. 1995; Londo, p.161-165Publication HEMT MMIC-circuits for millimetre-wave telecommunications systems
Proceedings paper1994, Proceedings IEEE Second Symposium on Communications and Vehicular Technology in the Benelux, 2/11/1994, p.107-112Publication High performance AlGaAs/InGaAs pseudomorphic HEMTs after epitaxial lift-off
; ; ; Proceedings paper1995, Compound Semiconductors 1994. Proceedings of the 21st International Symposium, 18/09/1994, p.689-692Publication High-gain amplifiers using InP-based dual-gate cascade HEMTs
Proceedings paper1995, Proceedings IEEE Topical Meeting on Nomadic Microwave Technologies and Techniques for Mobile Communications and Detection; 16-18, p.127-130Publication Hot electron degradation effects in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs
Publication Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs
Publication Influence of kink effect on noise measurements at microwave frequencies in InP substrate PHEMTs
Proceedings paper1996, Proceedings 3rd ELEN Workshop, 5/11/1996, p.165-170Publication Influence of nitride passivation on the performance of InAlAs/InGaAs HEMTs
Proceedings paper1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.803-807Publication Influence of the kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
Journal article1996, Solid-State Electronics, (39) 10, p.1423-6Publication InP HEMT technology for low noise MMIC applications
Oral presentation1996, HETECH '96 - 6th Workshop on Heterostructure Technology; September 15-17, 1996; Villeneuve d'Ascq, France.Publication InP-based HEMT technology for MMIC applications
Proceedings paper1995, Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the 23rd SOTAPOCS, 8/10/1995, p.395-407Publication Large-signal extraction method for GaAs and InP HEMT diodes
Proceedings paper1994, 3rd International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 5/10/1994, p.159-64Publication Large-signal HEMT modeling, specifically optimized for InP based HEMTs..
Proceedings paper1996, 8th International Conference on Indium Phosphide and Related Materials - IPRM, 21/04/1996, p.638-641Publication Material and process related limitations of In P HEMT performance
Journal article1997, Materials Science and Engineering B, (44) 1_3, p.311-315