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Browsing by Author "Boissiere, Olivier"

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    AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics

    Karim, Zia
    ;
    Barbar, Ghassan
    ;
    Boissiere, Olivier
    ;
    Lehnen, Peer
    ;
    Lohe, Christoph
    ;
    Seidel, Tom
    Proceedings paper
    2007-10, Physics and Technology of High-k Dielectrics, 7/10/2007, p.557-567
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    Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition

    Adelmann, Christoph  
    ;
    Lehnen, Peer
    ;
    Van Elshocht, Sven  
    ;
    Zhao, Chao
    ;
    Brijs, Bert
    ;
    Franquet, Alexis  
    Journal article
    2007-10, Chemical Vapor Deposition, 13, p.567-573
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    Thermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications

    Adelmann, Christoph  
    ;
    Lehnen, Peer
    ;
    Ragnarsson, Lars-Ake  
    ;
    Conard, Thierry  
    ;
    Franquet, Alexis  
    Proceedings paper
    2008, Materials Science of High-k Dielectric Stacks - From Fundamentals to Technology, 24/03/2008, p.1073-H01-08

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