Browsing by Author "Boissiere, Olivier"
Now showing 1 - 3 of 3
- Results Per Page
- Sort Options
Publication AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
;Karim, Zia ;Barbar, Ghassan ;Boissiere, Olivier ;Lehnen, Peer ;Lohe, ChristophSeidel, TomProceedings paper2007-10, Physics and Technology of High-k Dielectrics, 7/10/2007, p.557-567Publication Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition
Journal article2007-10, Chemical Vapor Deposition, 13, p.567-573Publication Thermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications
Proceedings paper2008, Materials Science of High-k Dielectric Stacks - From Fundamentals to Technology, 24/03/2008, p.1073-H01-08