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Browsing by Author "Bolt, M."

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    Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data

    McNally, P. J.
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    Curley, J. W.
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    Bolt, M.
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    Reader, A.
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    De Wolf, Ingrid  
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    Tuomi, T.
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    Rantamäki, R.
    Oral presentation
    1998, 2nd International Conference on Materials for Microelectronics; 14-15 Sept. 1998; Bordeaux, France.
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    Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

    De Wolf, Ingrid  
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    Groeseneken, Guido  
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    Maes, Herman
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    Bolt, M.
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    Barla, K.
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    Reader, A.
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    McNally, P. J.
    Proceedings paper
    1998, Proceedings of the International Symposium on Testing and Failure Analysis- ISTFA, 16/11/1998, p.11-15
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    Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and Raman spectroscopy

    McNally, P. J.
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    Curley, J. W.
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    Bolt, M.
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    Reader, A.
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    Tuomi, T.
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    Rantamaki, R.
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    Danilewsky, A. N.
    Journal article
    1999, J. Materials Science: Materials in Electronics, (10) 5_6, p.351-358
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    Simulation of mechanical stresses during shallow trench isolation process

    Poncet, A.
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    Bolt, M.
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    Barla, K.
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    De Wolf, Ingrid  
    Proceedings paper
    1998, Proceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98; 8-10 Sept. 1998; Bordeaux, France., p.120-123

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