Browsing by Author "Bosman, Michel"
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Publication Controlling the Wet-Etch Directionality in Nanostructured Silicon
Journal article2022, ACS APPLIED ELECTRONIC MATERIALS, (4) 11, p.5191-5198Publication Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors
;Fu, Wei ;Chai, Jianwei ;Kawai, Hiroyo ;Maddumapatabandi, ThathsaraBussolotti, FabioJournal article2025, NATURE COMMUNICATIONS, (16) 1, p.8488Publication Patterning at the Resolution Limit of Commercial Electron Beam Lithography
Journal article2022, NANO LETTERS, (22) 18, p.7432-7440Publication Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement
;Pey, Kin Leong ;Raghavan, Nagarajan ;Wu, Xing ;Liu, Wenhu ;Li, XiangBosman, MichelJournal article2011, Microelectronic Engineering, (88) 7, p.1365-1372Publication Random telegraph noise reduction in metal gate high-k stacks by bipolar switching and the performance boosting technique
;Liu, Wenhu ;Pey, Kin Leong ;Raghavan, Nagarajan ;Wu, Xing ;Bosman, MichelKauerauf, ThomasProceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.182-189Publication Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime
;Raghavan, Nagarajan ;Pey, Kin Leong ;Li, Xiang ;Liu, Wenhu ;Wu, XingBosman, MichelJournal article2011, IEEE Electron Device Letters, (32) 6, p.716-718