Browsing by Author "Bosman, Niels"
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Publication Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.1-2Publication Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.90-93Publication The first observation of p-type electromigration failure in full ruthenium interconnects
Proceedings paper2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.6D.7-1-6D.7-9Publication Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
Proceedings paper2016-12, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.524-527