imec Institutional Repository Browsing {{ collection }} by Author "Canato, E."

Publication

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Rossetto, Isabella

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Meneghini, Matteo

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Canato, E.

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Barbato, M.

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Stoffels, Steve

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Posthuma, Niels

Journal article

2017, Microelectronics Reliability, 76-77, p.298-303

Publication

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Tajalli, A.

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Canato, E.

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Nardo, A.

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Meneghini, M.

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Stockman, Arno

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Moens, P.

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Zanoni, E.

Proceedings paper

2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-6

Publication

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Stockman, Arno

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Canato, E.

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Tajalli, A.

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Meneghini, M.

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Meneghesso, G.

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Zanoni, E.

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Moens, P.

Proceedings paper

2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.4B.5-1-4B.5-4

Publication

μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

Canato, E.

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Masin, F.

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Borga, M.

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Zanoni, E.

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Meneghini, M.

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Meneghesso, G.

;

Stockman, Arno

Proceedings paper

2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019

Browsing by Author "Canato, E."