Browsing by Author "Chen, J.D."

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High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

Wang, X.P.
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Li, M.F.
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Yu, HongYu
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Yang, J.J.
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Loh, W.Y.
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Zhu, C.X.
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Du, A.Y.
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Trigg, A.D.
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Zhang, G.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006
Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

Yu, HongYu
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Chen, J.D.
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Li, M.F.
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Lee, S.J.
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Kwong, D.L.
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van Dal, Marc
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Kittl, Jorge
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Lauwers, Anne
Proceedings paper
2005, Technical Digest International Electron Device Meeting (IEDM), 5/12/2005, p.27/03/2001-27/03/2004
Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2

Wang, X.P.
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Yang, J.J.
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Chen, J.D.
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Xie, R.L.
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Li, M.-F.
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Zhu, C.X.
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Yu, HongYu
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Du, A.Y.
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Lim, P.C.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.854-855
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Wang, X.P.
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Li, M.F.
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Yu, HongYu
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Yang, J.J.
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Chen, J.D.
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Zhu, C.X.
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Du, A.Y.
;
Loh, W.Y.
Journal article
2008, IEEE Electron Device Letters, (29) 1, p.50-53