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Browsing by Author "Chini, Alessandro"

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    AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction

    Zanoni, Enrico
    ;
    Meneghini, Matteo
    ;
    Chini, Alessandro
    ;
    Marcon, Denis  
    ;
    Meneghesso, Gaudenzio
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 10, p.3119-3131
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    Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

    Meneghini, Matteo
    ;
    Bertin, Marco
    ;
    Stocco, Antonio
    ;
    dal Santo, Gabriele
    ;
    Marcon, Denis  
    Journal article
    2013, Applied Physics Letters, (102) 16, p.163501
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    Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model

    Meneghini, Matteo
    ;
    Stocco, Antonio
    ;
    Bertini, Marco
    ;
    Ronchi, Nicolò
    ;
    Chini, Alessandro
    Proceedings paper
    2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.469-472
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    Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Mengehini, Matteo
    ;
    Stocco, Antonio
    ;
    Bertin, Marcon
    ;
    Marcon, Denis  
    ;
    Chini, Alessandro
    Journal article
    2012-01, Applied Physics Letters, (100) 3, p.33505

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