Browsing by Author "Chini, Alessandro"
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Publication AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Journal article2013, IEEE Transactions on Electron Devices, (60) 10, p.3119-3131Publication Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface
Journal article2013, Applied Physics Letters, (102) 16, p.163501Publication Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
;Meneghini, Matteo ;Stocco, Antonio ;Bertini, Marco ;Ronchi, NicolòChini, AlessandroProceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.469-472Publication Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
Journal article2012-01, Applied Physics Letters, (100) 3, p.33505